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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJH10012 DESCRIPTION With TO-3PN package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Abolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 400 8 10 15 2 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 118 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.95 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current CONDITIONS IC=0.2A ;IB=0 IC=3A; IB=0.6A IC=6A; IB=0.6A IC=10A; IB=2A IC=6A; IB=0.6A IC=10A; IB=2A IC=10A ; VCE=6V VCB=600V; IE=0 VCE=400V; IB=0 VEB=6V; IC=0 MIN 400 MJH10012 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF ts tf TYP. MAX UNIT V 1.5 2.0 2.5 2.5 3.0 2.8 V V V V V V mA mA mA Emitter cut-off current DC current gain DC current gain DC current gain CHA IN Storage time E SEM NG IF=10A IC=3A ; VCE=6V IC=6A ; VCE=6V OND IC TOR UC 1 40 2000 1 300 100 20 IC=10A ; VCE=6V Diode forward voltage 3.5 15 |I |I V s s IC=6.0A ; VCC=12V IB1=IB2=0.3A Fall time 15 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJH10012 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJH10012 CHA IN E SEM NG OND IC TOR UC 4 |
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